METHOD TO SELECTIVELY GROW PHASE CHANGE MATERIAL INSIDE A VIA HOLE
摘要
<p>An example embodiment is a method for filling a via hole with phase change material. The method steps include forming a bottom electrode in a substrate, depositing a dielectric layer above the bottom electrode, and forming a via hole within the dielectric layer down to a top surface of the bottom electrode. The substrate is heated to a reaction temperature and a first phase change material precursor is deposited within the via hole. The first precursor is configured to decompose on the top surface of the bottom electrode and chemisorb on a top surface of the dielectric layer at the reaction temperature. A second precursor is deposited within the via hole after the first precursor at least partially decomposes on the top surface of the bottom electrode.</p>
申请公布号
WO2012166255(A1)
申请公布日期
2012.12.06
申请号
WO2012US33708
申请日期
2012.04.15
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHEN, CHIEH-FANG;MACRONIX INTERNATIONAL CO., LTD.;LAM, CHUNG H.;SCHROTT, ALEJANDRO G.
发明人
CHEN, CHIEH-FANG;LAM, CHUNG H.;SCHROTT, ALEJANDRO G.