PHENOLIC RESIN AND MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY

摘要

Provided is a novel phenolic resin which is usable as a coating material and a resist resin for a semiconductor, has a high carbon concentration and a low oxygen concentration in the resin, shows a relatively high heat resistance and a relatively high solvent solubility, and is applicable to a wet process. Also provided are: a material useful for forming a novel photoresist underlayer film, said photoresist underlayer film having a relatively high solvent solubility, being applicable to a wet process and having a high etching resistance as an underlayer film for a multilayer resist; an underlayer film formed using the same; a pattern forming method using the same; and so on. The resin according to the present invention is obtained by reacting in the presence of an acidic catalyst a compound having a specific structure with an aldehyde having a specific structure. The material for forming an underlayer film for lithography according to the present invention comprises at least the aforesaid resin and an organic solvent.