thin film transistor and forming method of the same

摘要

PURPOSE: A thin film transistor and a manufacturing method thereof are provided to increase productivity by forming an amorphous oxide semiconductor of an active layer with a low temperature deposition process at 300 degrees centigrade. CONSTITUTION: A gate electrode(170) is formed on a substrate(110). A gate insulation layer(120) is formed on the gate electrode. An active layer(160) is formed on the gate insulation layer. The active layer is made of the amorphous oxide semiconductor. The amorphous oxide semiconductor is doped with metal dielectric. A source electrode(130) and a drain electrode(150) are formed on both sides of the active layer.