发明名称 System and method for self-aligned dual patterning
摘要 A system and a method for self-aligned dual patterning are described. The system includes a platform for supporting a plurality of process chambers. An etch process chamber coupled to the platform. An ultra-violet radiation photo-resist curing process chamber is also coupled to the platform.
申请公布号 US8323451(B2) 申请公布日期 2012.12.04
申请号 US201113100147 申请日期 2011.05.03
申请人 NGAI CHRISTOPHER SIU WING;APPLIED MATERIALS, INC. 发明人 NGAI CHRISTOPHER SIU WING
分类号 C23F1/08;C23C16/00;H01L21/36 主分类号 C23F1/08
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