Synchronous dynamic random access memory semiconductor device for controlling output data

摘要

Provided is a synchronous dynamic random access memory (DRAM) semiconductor device including multiple output buffers, a strobe control unit and multiple strobe buffers. Each of the output buffers is configured to output one bit of data. The strobe control unit is configured to output multiple strobe control signals in response to an externally input signal. The strobe buffers are connected to the output buffers and the strobe control unit, and each of the strobe buffers is configured to output at least one strobe signal. At least some of the strobe buffers are activated in response to the strobe control signals, and the output buffers are activated in response to the strobe signals output by the activated strobe buffers.