发明名称 SOLID STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To obtain a solid state imaging device capable of enhancing microfabrication and sensibility while preventing crosstalk and dark current from increasing, by a highly reliable manufacturing method. <P>SOLUTION: The solid state imaging device comprises a semiconductor device 1, a transistor 4 formed above the semiconductor device 1, a wiring layer formed on the semiconductor device 1 and including an interconnection 10 for electrical connection with the transistor 4, and a photoelectric conversion part 14 formed on the wiring layer to be connected electrically with the interconnection 10 and including a plurality of lower electrodes 11 arranged in matrix, a photoelectric conversion film 12 formed on the plurality of lower electrodes 11 and an upper electrode 13 formed on the photoelectric conversion film 12. The photoelectric conversion film 12 is a single layer film or a multilayer film and contains a copper oxide (I). <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012234949(A) 申请公布日期 2012.11.29
申请号 JP20110102079 申请日期 2011.04.28
申请人 PANASONIC CORP 发明人 UEDA TETSUYA;MATSUNAGA MASAYUKI
分类号 H01L27/146;H01L31/10;H04N5/359;H04N5/361;H04N5/374 主分类号 H01L27/146
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