发明名称 TERNARY CMOS WITH NOR LOGIC ELEMENT
摘要 FIELD: radio engineering.SUBSTANCE: electrical circuit of a ternary CMOS with a NOR logic element, having first and second input and output buses, a common bus and a supply bus, first and second n-MOS transistors and first and second p-MOS transistors, wherein gates of the first n-MOS and p-MOS transistors are connected to the first input bus, and gates of second n-MOS and p-MOS transistors are connected to the second input bus; the source of the first n-MOS transistor is connected to the common bus and its drain is connected to the source of the second n-MOS transistor; the source of the first p-MOS transistor is connected to the supply bus; wherein the electrical circuit has two additional capacitors, the first connected to the drain of the second n-MOS transistor and the output bus and the second to the drain of the second p-MOS transistor and the output bus, wherein the source of the second p-MOS transistor is connected to the drain of the first p-MOS transistor.EFFECT: high information capacity of logic elements.11 dwg, 1 tbl
申请公布号 RU2468510(C1) 申请公布日期 2012.11.27
申请号 RU20110138066 申请日期 2011.09.16
申请人 MURASHEV VIKTOR NIKOLAEVICH;ZABEDNOV PAVEL VLADIMIROVICH 发明人 MURASHEV VIKTOR NIKOLAEVICH;ZABEDNOV PAVEL VLADIMIROVICH;IVSHIN PAVEL ALEKSANDROVICH;BARANOV ALEKSANDR NIKOLAEVICH;LEGOTIN SERGEJ ALEKSANDROVICH
分类号 H03K19/0948;H03K19/20 主分类号 H03K19/0948
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