| 发明名称 |
NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER |
| 摘要 |
According to one embodiment, a nitride semiconductor device includes a foundation layer and the functional layer. The foundation layer is formed on an amorphous layer and includes aluminum nitride. The functional layer is formed on the foundation layer and includes a nitride semiconductor.
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| 申请公布号 |
US2012292648(A1) |
申请公布日期 |
2012.11.22 |
| 申请号 |
US201113219011 |
申请日期 |
2011.08.26 |
| 申请人 |
ONO HIROSHI;SHIODA TOMONARI;SUGIYAMA NAOHARU;OKA TOSHIYUKI;NUNOUE SHINYA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
ONO HIROSHI;SHIODA TOMONARI;SUGIYAMA NAOHARU;OKA TOSHIYUKI;NUNOUE SHINYA |
| 分类号 |
H01L33/30;H01L21/20 |
主分类号 |
H01L33/30 |
| 代理机构 |
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