SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

This semiconductor device includes a semiconductor layer comprising a wide band gap semiconductor, and a Schottky electrode contacting a surface of the semiconductor layer. The semiconductor layer includes: a drift layer that forms the surface of the semiconductor layer; and a high-resistance layer formed on a surface layer part of the drift layer, and having higher resistance than the drift layer. The high-resistance layer is formed by injecting impurity ions from the surface of the semiconductor layer, followed by an annealing process at below 1500ºC.