| 摘要 |
Disclosed is a method of producing a semiconductor wafer, which includes: placing a wafer (10), which is provided with a substrate (11) and a semiconductor layer (20) formed on the substrate (11), on a carrier plate (fixing plate) (31) of a grinder via fixing wax (33a and 33b) in a manner such that the surface (10a) to be ground of the wafer (10) faces upward; heating the carrier plate (31), on which the wafer (10) is placed, in order to soften the fixing wax (33a and 33b); pressure-contacting the wafer (10) from the side of the surface (10a) to be ground by means of an air bag in a manner such that a portion of the softened fixing wax (33a and 33b) spreads and protrudes from the peripheral edge of the wafer (10); cooling the carrier plate (31) while applying pressure to the wafer (10) in order to cure the fixing wax (33a and 33b) and fix the wafer (10) onto the carrier plate (31); and rotating the surface (10a) to be ground of the fixed wafer (10) while pressure-contacting the surface (10a) to the grinding plate of the grinder, thereby grinding the surface (10a) to be ground. As a consequence, even if the wafer has warping, the wafer is ground to have a predetermined thickness. |
