发明名称 Organic field effect transistor
摘要 <p>An organic field effect transistor including an organic semiconductor layer constituting a current path between a source electrode and a drain electrode wherein the organic semiconductor layer is made of a conjugated polymer having a depletion layer and a conductivity of the organic semiconductor layer is controlled by using a gate electrode, wherein the depletion layer is formed by joining a reductive material being capable of forming Schottky contact with the organic semiconductor layer made of the conjugated polymer. There can be provided an organic field effect transistor using a conjugated polymer as an organic semiconductor and being capable of maintaining an insulation property.</p>
申请公布号 KR101203970(B1) 申请公布日期 2012.11.22
申请号 KR20117001667 申请日期 2009.06.04
申请人 发明人
分类号 H01L29/78;H01L21/336;H01L51/05 主分类号 H01L29/78
代理机构 代理人
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