| 摘要 |
A non-volatile memory device includes a first storage layer making contact with a sidewall of an active region in an isolation trench and a second charge storage layer making contact with an opposite sidewall of the active region in the isolation trench, first and second tunnel insulation layers interposed between the first charge storage layer and the active region and between the second charge storage layer and the active region, a first charge blocking layer disposed over the first and second charge storage layers, and a control gate disposed over the first charge blocking layer. |
