| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a leakage current between a pixel part and electrodes. <P>SOLUTION: A solid-state imaging apparatus 1 includes: a semiconductor layer 13 having a first region and a second region; a pixel part provided in the first region; a plurality of electrodes 22 which are provided in the second region and penetrate the semiconductor layer 13; and a guard ring 20 which is provided in the second region, penetrates the semiconductor layer 13, and electrically isolates the pixel part from the plurality of electrodes 22. An upper surface of the semiconductor layer 13 in the second region is lower than an upper surface of the semiconductor layer 13 in the first region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
