| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor film stable in the degree of electric conductivity, and to provide a semiconductor device which receives stable electrical characteristics by using the oxide semiconductor film and which is high in reliability. <P>SOLUTION: An oxide semiconductor film contains indium (In), gallium (Ga) and zinc (Zn). The oxide semiconductor film has a crystalline region subjected to c-axis orientation aligned in the direction horizontal to the normal vector of a surface to be formed of the oxide semiconductor film. The composition of the crystalline region subjected to the c-axis orientation is expressed by In<SB POS="POST">1+</SB><SB POS="POST">δ</SB>Ga<SB POS="POST">1-δ</SB>O<SB POS="POST">3</SB>(ZnO)<SB POS="POST">m</SB>(wherein 0<δ<1, m=1 to 3), and the composition of the whole oxide semiconductor film including the crystalline region subjected to the c-axis orientation contains In<SB POS="POST">x</SB>Ga<SB POS="POST">y</SB>O<SB POS="POST">3</SB>(ZnO)<SB POS="POST">m</SB>(wherein 0<x<2, 0<y<2, m=1 to 3). <P>COPYRIGHT: (C)2013,JPO&INPIT |
