发明名称 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 There is disclosed a substrate processing apparatus including a processing chamber housing a substrate, pipes for supplying gas into the processing chamber, and heaters provided in the middle of the pipes, and heating the gas. In the substrate processing apparatus, the heaters heat the gas to a temperature lower than a temperature at which exhaust gas is generated from the pipes to dry the substrate in the heated gas.
申请公布号 US2012295429(A1) 申请公布日期 2012.11.22
申请号 US201213562741 申请日期 2012.07.31
申请人 KAWAMOTO TOMOKAZU;FUJITSU SEMICONDUCTOR LIMITED 发明人 KAWAMOTO TOMOKAZU
分类号 H01L21/425 主分类号 H01L21/425
代理机构 代理人
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