发明名称 SEMICONDUCTOR DEVICES AND FABRICATION METHOD THEREOF
摘要 PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve luminous efficiency by forming a double texturing pattern which includes a macro-pattern and a micro-pattern. CONSTITUTION: An active layer(320) is formed between one side of a first semiconductor layer(310) and one side of a second semiconductor layer(330). A reflecting layer(340) is generated on the active layer and reflects light which progresses to the rear side. A metal support layer(350) is used as an electrode of the second semiconductor layer. Embossed portions(150) of a first pattern are formed on the other side of the first semiconductor layer. Embossed portions(160) of a second pattern are formed between the embossed portion of the first pattern. [Reference numerals] (310) First semiconductor layer; (320) Active layer; (330) Second semiconductor layer; (340) Reflecting layer; (350) Metal support layer
申请公布号 KR20120126825(A) 申请公布日期 2012.11.21
申请号 KR20110044899 申请日期 2011.05.13
申请人 发明人
分类号 H01L33/22 主分类号 H01L33/22
代理机构 代理人
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