| 摘要 |
PURPOSE: A gain cell type semiconductor memory device and a driving method thereof are provided to reduce power consumption by changing only the potential of a write bit line to be rewritten. CONSTITUTION: A semiconductor device includes a write bit line(105), a write word line, a read line, a source line, and a memory cell(101). The memory cell includes a write transistor, a read transistor(107), and a capacitor(103). A gate of the write transistor is connected to the write word line. A drain of the write transistor is connected to an electrode of the capacitor. A source of the write transistor is connected to the source line. The read line is orthogonal to the source line. |
