发明名称 |
SUBSTRATE PROCESSING METHOD, PROGRAM, COMPUTER STORAGE MEDIUM, SUBSTRATE PROCESSING APPARATUS AND IMPRINT SYSTEM |
摘要 |
<P>PROBLEM TO BE SOLVED: To effectively form a coating film on a substrate to improve throughput of substrate processing. <P>SOLUTION: In a wafer processing apparatus, ultraviolet light is radiated on a surface W<SB POS="POST">1</SB>of a wafer W to clean the surface W<SB POS="POST">1</SB>(FIG. 18(a)); subsequently, an adherence agent B is coated on the whole area of the surface W<SB POS="POST">1</SB>of the wafer W (FIG. 18(b)); the adherence agent B is burned (FIG. 18(c)); subsequently, the adherence agent B is rinsed and an adhesion film B<SB POS="POST">F</SB>is deposited on the wafer W (FIG. 18(d)); subsequently, a resist solution R having a photoinitiator is coated on the adhesion film B<SB POS="POST">F</SB>of the wafer W (FIG. 18(e)); subsequently, ultraviolet of a predetermined amount of light is radiated on the resist solution R on the wafer W to make the resist solution R be in a semi-cured state such that the resist solution R does not spread and cohere on the wafer W; and a semi-cured resist film R<SB POS="POST">F</SB>is deposited on the wafer (FIG. 18(f)). <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012227318(A) |
申请公布日期 |
2012.11.15 |
申请号 |
JP20110092765 |
申请日期 |
2011.04.19 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
HIROSHIRO KOKICHI;NISHI TAKANORI;TERADA SHOICHI;KITANO TAKAHIRO |
分类号 |
H01L21/027;B05C9/12;B05C11/08;B29C39/10;B29C59/02 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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