ION SENSITIVE FIELD EFFECT TRANSISTOR

摘要

A CMOS or bipolar based Ion Sensitive Field Effect Transistor (ISFET) comprising an ion sensitive recess for holding a liquid wherein the recess is formed at least partly on top of a gate of the transistor. There is also provided a method of manufacturing an I on Sensitive Field Effect Transistor (ISFET) utilising CMOS processing steps, the method comprising forming an ion sensitive recess for holding a liquid at least partly on top of a gate of the transistor.