| 摘要 |
A plasma device includes: a reaction chamber; an upper electrode positioned upward in the reaction chamber; a lower electrode facing the upper electrode; a baffle plate enclosing the lower electrode and including a plurality of cutouts formed at the edge thereof, wherein a boundary line of the cutout is connected to a boundary line of the baffle plate, thereby forming a recess portion at the edge of the baffle plate. The cutouts of the baffle plate change the flow of the reactive gas in the chamber, helping achieve a more uniform etch.
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