| 摘要 |
There is provided a technique capable of reducing a layout area of a standard cell configuring a digital circuit even under a circumstance that a new layout rule introduced in accordance with microfabrication of a MISFET is provided. For example, a protruding wiring PL1A protrudes from a power supply wiring L1A at each corner of both ends of a standard cell CL toward an inside of the standard cell CL (in a Y direction), and a bent portion BD1A which is bent from the protruding wiring PL1A in an X direction is formed. And, this bent portion BD1A and a p-type semiconductor region PDR are connected to each other via a plug PLG. |
