发明名称 Mask for increased uniformity in ion beam deposition
摘要 A shaper mask for particle flux includes a central portion extending from a body of the shaper mask along a first axis to block at least a first portion of a particle flux through the shaper mask from a first direction. The mask also includes at least one off-axis portion. Each off-axis portions extends from the body of the shaper mask along a respective second axis different from the first axis. Each off-axis portion is shaped to block a respective second portion of the particle flux traveling through the shaper mask from a second direction different from the first direction.
申请公布号 US8308921(B1) 申请公布日期 2012.11.13
申请号 US20060643494 申请日期 2006.12.21
申请人 HINER HUGH C.;ZHAO LIJIE;HEGDE HARIHARAKESHAVA;WESTERN DIGITAL (FREMONT), LLC 发明人 HINER HUGH C.;ZHAO LIJIE;HEGDE HARIHARAKESHAVA
分类号 C23C14/00 主分类号 C23C14/00
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