METHOD FOR GRINDING SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a grinding method which is excellent in continuous stability and wears a less amount of a grindstone, and by which the surface roughness of the grindstone can be maintained without the need for maintenance in a rough processing and a finishing processing after attaching the grindstone to a grinder and bandfiling it.

SOLUTION: The method comprises: a step S13 which includes grinding a principal plane of a semiconductor wafer 3 while bringing down a grinding unit 11 toward the semiconductor wafer at a first speed with a chuck table unit 41 kept rotating at a first number of revolutions; a step S15 which includes changing the number of revolutions of the chuck table unit 41 to a second number of revolutions which is slower than the first number of revolutions in line with the time when the thickness of the semiconductor wafer 3 reaches a thickness at least 5 μm thicker than a given thickness; and a step S17 which includes bringing up the grinding unit at a second speed faster than the first one in line with the time when the thickness of the semiconductor wafer 3 reaches the given thickness.

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