发明名称 |
Method of Fabricating Thin Film Transistor and Top-gate Type Thin Film Transistor |
摘要 |
A method of fabricating a thin film transistor (TFT) and a top-gate type thin film transistor are disclosed, the method of fabricating a TFT of the present invention comprises steps: (A) providing a substrate; (B) forming a source electrode, a drain electrode, and SWCNT (singled-walled carbon nanotubes) layer on the substrate, in which the source electrode and the drain electrode are spaced in a distance and the SWCNT layer is located between the source electrode and the drain electrode; (C) forming a gate oxide layer on the SWCNT layer; (D) annealing the gate oxide layer with oxygen or nitrogen gas; and (E) forming a gate electrode on the gate oxide layer; wherein the temperature used in the step (D) for annealing is a 500° C. to 600° C.
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申请公布号 |
US2012280213(A1) |
申请公布日期 |
2012.11.08 |
申请号 |
US201213463856 |
申请日期 |
2012.05.04 |
申请人 |
GAU CHIE;SHIAU SHIUAN-HUA;CHENG BAI-SHENG;NATIONAL CHENG KUNG UNIVERSITY |
发明人 |
GAU CHIE;SHIAU SHIUAN-HUA;CHENG BAI-SHENG |
分类号 |
H01L29/772;B82Y40/00;B82Y99/00;H01L21/336 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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