| 摘要 |
PURPOSE: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to prevent leakage between electrodes by eliminating a metal layer from a part which is exposed to a surface. CONSTITUTION: An n-type nitride semiconductor layer(11) is laminated on a substrate(2). An n-side electrode connection side(10a) is formed on an n-type nitride semiconductor layer. A p-side electrode connection side(10b) is formed on a p-type nitride semiconductor layer. An n-side electrode is connected to the n-side electrode connection side. A p-side electrode is connected to the p-side electrode connection side.
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