PRODUCTION METHOD FOR NANO SILICON CARBIDE USING A THERMAL PLASMA

摘要

The present invention relates to a production method for nano silicon carbide using a thermal plasma, and, more specifically, relates to a production method for nano silicon carbide using a thermal plasma wherein the method comprises the steps of: a) synthesising micro silicon carbide (SiC) by mixing and then calcining a silicon fine powder and a carbon source; and b) producing nano silicon carbide by subjecting the micro silicon carbide to processing by means of a thermal plasma. The method which is provided makes it possible to achieve relatively straightforward and economic synthesis of a silicon carbide powder having a mean particle size in a range of from 10 to 500 nm by using a silicon waste fine powder having a particle size of no more than 100 µm which is created during a process such as grinding/grading metallic silicon, and thus a higher added value is given to silicon fine powder and at the same time nano silicon carbide fine powder can be produced in a way which is both economical and environmentally friendly.