| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device using a semiconductor chip having an interlayer insulation film of a low dielectric constant. <P>SOLUTION: A resin layer including a glass fiber cloth is used for each of a core substrate 11 and insulation layers of first build-up substrates 12a, 12b and second build-up substrates 12c, 12d. A semiconductor chip 22 includes a semiconductor element formed on a silicon substrate, a SiO<SB POS="POST">2</SB>film formed on the semiconductor element, a wiring layer and an interlayer insulation film having a dielectric constant lower than that of the SiO<SB POS="POST">2</SB>film formed on the SiO<SB POS="POST">2</SB>film and a plurality of pad electrodes formed on the wiring layer and the interlayer insulation film. The plurality of pad electrodes are connected with the core substrate 11 via a plurality of first bump electrodes. <P>COPYRIGHT: (C)2013,JPO&INPIT |
