| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering target capable of suppressing abnormal discharge generated in film formation of an oxide semiconductor film by using a sputtering method, and can provide stably and well reproducibly the oxide semiconductor film. <P>SOLUTION: A method for manufacturing a sintered compact includes: a step of mixing raw material compounds so that the proportions of In, Ga and Al become atom ratios of the following expressions (1): Ga/(In+Ga+Al)=0.01 to 0.08 and (2): Al/(In+Ga+Al)=0.0001 to 0.03, and making a green body thereof; and a step of sintering the green body by heating at a temperature-rising rate of 0.1°C/min to 2°C/min in the temperature range from 800°C to a sintering temperature, and thereafter holding 1,450°C to 1,650°C for 10 to 50 hours. <P>COPYRIGHT: (C)2013,JPO&INPIT |
