| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve adhesion between a barrier metal film and a Cu film. <P>SOLUTION: A Ti film or a Ta film is formed as the barrier metal film on a substrate by a sputtering method, a nitride film is formed on the barrier metal film by the sputtering method, and the Cu film is formed on the nitride film by a CVD method, and thereafter, annealing is performed at 100-400°C. By forming the Cu film in this way, adhesion between the barrier metal film and the Cu film is improved. <P>COPYRIGHT: (C)2013,JPO&INPIT |
