| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that allows manufacturing of a semiconductor device having high reliability in high productivity. <P>SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming an element formation layer 5 on a surface of a semiconductor substrate 1 of a base plate 4 that has the semiconductor substrate 1, a supporting substrate 3, and a first insulating film 2 interposed therebetween; forming a wiring layer 6 on the element formation layer 5; forming trenches 7 that penetrate through the wiring layer 6, the element formation layer 5, the semiconductor substrate 1, and the first insulating film 2 and reach inside the supporting substrate 3; forming plugs 9 in the trenches 7 via a second insulating film 8; forming, on the second insulating film 8, first terminals 10 that are electrically connected to the plugs 9 and wiring in the wiring layer 6; removing the supporting substrate 3 and exposing the plugs 9 on a surface of the first insulating film 2; and forming, on the first insulating film 2, second terminals 11 that are electrically connected to the plugs 9 exposed on the surface of the first insulating film 2. <P>COPYRIGHT: (C)2013,JPO&INPIT |
