发明名称 |
EPITAXIAL LIFT OFF IN INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS |
摘要 |
The present disclosure provides a process for manufacturing a solar cell by selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown. In some embodiments the process includes, among other things, providing a first substrate; depositing a separation layer on said first substrate; depositing on said separation layer a sequence of layers of semiconductor material forming a solar cell; mounting and bonding a flexible support on top of the sequence of layers; etching said separation layer while applying an agitating action to the etchant solution so as to remove said flexible support with said epitaxial layer from said first substrate. |
申请公布号 |
US2012276676(A1) |
申请公布日期 |
2012.11.01 |
申请号 |
US201213465477 |
申请日期 |
2012.05.07 |
申请人 |
CORNFELD ARTHUR;MCGLYNN DANIEL;VARGHESE TANSEN;EMCORE SOLAR POWER, INC. |
发明人 |
CORNFELD ARTHUR;MCGLYNN DANIEL;VARGHESE TANSEN |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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