发明名称 EPITAXIAL LIFT OFF IN INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS
摘要 The present disclosure provides a process for manufacturing a solar cell by selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown. In some embodiments the process includes, among other things, providing a first substrate; depositing a separation layer on said first substrate; depositing on said separation layer a sequence of layers of semiconductor material forming a solar cell; mounting and bonding a flexible support on top of the sequence of layers; etching said separation layer while applying an agitating action to the etchant solution so as to remove said flexible support with said epitaxial layer from said first substrate.
申请公布号 US2012276676(A1) 申请公布日期 2012.11.01
申请号 US201213465477 申请日期 2012.05.07
申请人 CORNFELD ARTHUR;MCGLYNN DANIEL;VARGHESE TANSEN;EMCORE SOLAR POWER, INC. 发明人 CORNFELD ARTHUR;MCGLYNN DANIEL;VARGHESE TANSEN
分类号 H01L31/18 主分类号 H01L31/18
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