| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A semiconductor device includes a dielectric layer, where the dielectric layer includes a metal oxide layer, a metal nitride carbide layer including hydrogen therein, and a reduction prevention layer inserted between the metal nitride carbide layer and the dielectric layer.
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| 申请公布号 |
US2012273921(A1) |
申请公布日期 |
2012.11.01 |
| 申请号 |
US201113334048 |
申请日期 |
2011.12.21 |
| 申请人 |
DO KWAN-WOO;LEE KEE-JEUNG;PARK KYUNG-WOONG;BAEK KUN-HOON;AHN JI-HOON;PARK WOO-YOUNG |
发明人 |
DO KWAN-WOO;LEE KEE-JEUNG;PARK KYUNG-WOONG;BAEK KUN-HOON;AHN JI-HOON;PARK WOO-YOUNG |
| 分类号 |
H01L29/92;H01L21/02 |
主分类号 |
H01L29/92 |
| 代理机构 |
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代理人 |
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