| 摘要 |
A multilayer wafer structure containing a silicon layer that contains at least one waveguide, an insulating layer and a layer that is lattice compatible with Group III-V compounds, with the lattice compatible layer in contact with one face of the insulating layer, and the face of the insulating layer opposite the lattice compatible layer is in contact with the silicon layer. The silicon and insulating layers contain either or both of at least one continuous cavity filled with materials such as to constitute a photodetector zone, or at least one continuous cavity filled with materials such as to constitute a light source zone. |
