Electronic device including doped regions between channel and drain regions and a process of forming the same

摘要

An electronic device can include a drain region of a transistor, wherein the drain region has a first conductivity type. The electronic device can also include a channel region of the transistor, wherein the channel region has a second conductivity type opposite the first conductivity type. The electronic device can further include a first doped region having the first conductivity type, wherein the first doped region extends from the drain region towards the channel region. The electronic device can still further include a second doped region having the first conductivity type, wherein the second doped region is disposed between the first doped region and the channel region.