发明名称 |
Methods for normalizing strain in semiconductor devices and strain normalized semiconductor devices |
摘要 |
A method of normalizing strain in semiconductor devices and normalized strain semiconductor devices. The method includes: forming first and second field effect transistors of an integrated circuit; forming a stress layer over the first and second field effect transistors, the stress layer inducing strain in channel regions of the first and second field effect transistors; and selectively thinning the stress layer over at least a portion of the second field effect transistor. |
申请公布号 |
US8298876(B2) |
申请公布日期 |
2012.10.30 |
申请号 |
US20090622464 |
申请日期 |
2009.11.20 |
申请人 |
BALCH BRUCE;BERNSTEIN KERRY;ELLIS-MONAGHAN JOHN JOSEPH;HABIB NAZMUL;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BALCH BRUCE;BERNSTEIN KERRY;ELLIS-MONAGHAN JOHN JOSEPH;HABIB NAZMUL |
分类号 |
H01L21/00;H01L21/336;H01L21/8234;H01L21/8238;H01L21/84 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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