| 摘要 |
An integral humidity sensor comprises a silicon plate on the surface of which in sequence layers of silicon oxide and nitride are applied in sequence, with layer of polycrystalline silicon and material that absorbs moisture and is formed from mix of silicon oxides and aluminum and doped with copper oxides within 3-6 %. The layer of polycrystalline material is arranged as single perforated rectangle that is the upper electrode, and the silicon plate is, respectively, the lower one of a capacitive structure formed in such a way. Aluminum oxide modified with lithium ions (0.1-0.3 %) is a material that absorbs moisture, with thickness of applied material of about 70 nm with specific grain size 10-20 nm. |
