| 摘要 |
<p>PURPOSE: A method for manufacturing a nonvolatile memory device is provided to prevent a leakage of a high voltage transistor by performing a device isolation ion implantation process after a part of a device isolation film is formed. CONSTITUTION: A plurality of layers are laminated on the semiconductor substrate. A plurality of trenches(160) are formed by etching a semiconductor substrate(100) with a preset depth from the plurality of the layers. A first insulation layer(180) is formed to fill a trench with a narrow width and a trench with a wide width. Ions are implanted into the semiconductor substrate. A second insulation layer(190) is formed to fill the entire part of the trench with the wide width. A device isolation film(200) is formed by grinding the first insulation layer and the second insulation layer.</p> |
