INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS

摘要

PURPOSE: An inductively coupled plasma processing apparatus is provided to prevent damage to a dielectric by dispersing stress added to the dielectric. CONSTITUTION: A chamber body(110) has an opening formed on an upper portion. A dielectric(150) is installed in order to cover the opening of the chamber body. The dielectric includes one or more through holes(210). A substrate supporter(130) is installed to the chamber body in order to support a substrate(10). An antenna(160) is installed on an upper portion of the dielectric in order to form an induction field in a process space. A ceiling portion(170) is arranged on the upper portion of the chamber body. A plurality of dielectric supporting members(220) is inserted into a through hole(210) of the dielectric. The plurality of dielectric supporting members is combined with the ceiling portion in order to support the dielectric.