| 摘要 |
PURPOSE: A method for forming a Ni(Nickel) film is provided to improve throughputs in a semiconductor device manufacturing process by combining and using H2 gas and NH3(Ammonia) gas as reduction gas and forming the Ni film on a surface of a Si substrate. CONSTITUTION: A Si substrate is maintained in constant temperature in a vacuum chamber. A Ni film is formed using a CVD(Chemical Vapor Deposition) method by introducing Nickel alkyl amidinate(alkyl is selected from methyl, ethyl, butyl, and propyl), H2, and NH3 into the vacuum chamber. Film formation temperature is 280°C to 350°C. The nickel alkyl amidinate is introduced within the vacuum chamber while maintaining 90°C-150°C. [Reference numerals] (AA,CC) Film thickness(nm); (BB,DD) Film forming time(sec)
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