Electronic component with p-doped organic semiconductor

摘要

An electronic component comprising a layer of organic semiconducting material in which a dopant is dispersed having an energy difference between the work function of the dopant and of the HOMO level of said organic semiconducting material that is less than 0.5 eV. The dopant is an atomic element having an evaporation temperature lower than 1300° C. for a pressure of 10−8 Torr. The invention enables the toxicity problems connected with usual organic acceptor dopants to be avoided. It applies in particular to organic light-emitting diodes.