发明名称 Interference systems for microlithographic projection exposure systems
摘要 An optical system of a microlithographic projection exposure apparatus permits comparatively flexible and fast influencing of the intensity distribution and/or the polarization state. The optical system includes at least one layer system that is at least one-side bounded by a lens or a mirror. The layer system is an interference layer system of several layers and has at least one liquid or gaseous layer portion with a maximum thickness of one micrometer (μm), and a manipulator for manipulation of the thickness profile of the layer portion.
申请公布号 US8294991(B2) 申请公布日期 2012.10.23
申请号 US20100687299 申请日期 2010.01.14
申请人 MUELLER RALF;GRUNER TORALF;TOTZECK MICHAEL;FELDMANN HEIKO;PAUL HANS-JOCHEN;CARL ZEISS SMT GMBH 发明人 MUELLER RALF;GRUNER TORALF;TOTZECK MICHAEL;FELDMANN HEIKO;PAUL HANS-JOCHEN
分类号 G02B27/00 主分类号 G02B27/00
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