| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element and a semiconductor element manufacturing method which can reduce contact resistance between a drain electrode and a drain layer. <P>SOLUTION: A semiconductor element comprises: a drain layer of a first conductivity type; a drift layer of the first conductivity type formed on the drain layer; a base layer of a second conductivity type selectively formed on the drift layer; a source layer of a first conductivity type selectively formed on the base layer; a gate electrode formed across the drift layer, the base layer and the source layer via a gate insulation film; a source electrode electrically connected with the base layer and the source layer; and a drain electrode that is formed in a first trench penetrating the drift layer with at least a part of a bottom reaching the drain layer and electrically connected with the drain layer. At the bottom of the drain electrode, convexoconcave is formed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
