| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition and a method of resist pattern formation with which a resist pattern having excellent lithography characteristics, in a desirable shape can be formed. <P>SOLUTION: A resist composition contains a base component (A) whose solubility to a developing solution changes due to the action of an acid and an acid generating agent component (B) that generates an acid upon exposure to light. The base component (A) contains a resin component (A1) having structural units (a0) shown in the general formulation (a0-1) or (a0-2), and the acid generating agent component (B) contains an acid generating agent (B1) containing a compound shown in the general formulation (b0-1) or (b0-2). <P>COPYRIGHT: (C)2013,JPO&INPIT |
