| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gas barrier vapor deposition film that prevents an occurrence of splash phenomenon and has high gas barrier property. <P>SOLUTION: An inorganic oxide film 2 is formed on a polymer film base material 1 by depositing a vapor deposition material using a heating method, wherein the vapor deposition material includes metallic silicon, silicon dioxide, and metallic bismuth or bismuth oxide powder, the ratio äO/(Si+Bi)} of atomic number of oxygen to atomic number in total of silicon and bismuth is 1.0 to 1.8, and the ratio (Bi/Si) of atomic number of bismuth to that of silicon is 0.02 to 0.10. In the deposited film, the ratio äO/(Si+Bi)} of atomic number of oxygen to atomic number in total of silicon and bismuth is 1.6 to 1.9 and the ratio (Bi/Si) of atomic number of bismuth to that of silicon is 0.02 to 0.10. <P>COPYRIGHT: (C)2013,JPO&INPIT |
