METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

This method for producing a silicon carbide semiconductor device involves the following steps in the following order: a conductive layer formation step for forming a conductive layer on a silicon carbide layer (110); a heat treatment step for forming an alloy layer comprising a reaction layer (120) that comes into contact with the silicon carbide layer (110) and a silicide layer (124) that is on the reaction layer (120) by reacting the conductive layer with the silicon carbide layer (110); a first plasma ashing step for removing the carbon components contained in the silicide layer; an etching step for exposing at least a portion of the surface of the reaction layer (120) by removing at least a portion of the silicide layer (124) by using hydrochloric acid, nitric acid and hydrofluoric acid; and an electrode layer formation step for forming an electrode layer (130) above the exposed reaction layer (120). With this method for producing a silicon carbide semiconductor device, it is possible to produce a silicon carbide semiconductor device at a high productivity and to alleviate the problem in which variations in device characteristics occur due to silicon components remaining in the etching step.