GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME

摘要

According to the embodiment of the present invention, a gallium nitride compound semiconductor light emitting element is provided with an n-type gallium nitride compound semiconductor layer, a p-type gallium nitride compound semiconductor layer, and an active layer positioned between the n-type gallium nitride compound semiconductor layer and the p-type gallium nitride compound semiconductor layer. The active layer and the p-type gallium nitride compound semiconductor layer are m-plane semiconductor layers. The p-type gallium nitride compound semiconductor layer contains magnesium at a concentration of 2.0×1018 cm-3-2.5×1019 cm-3, and oxygen at a concentration of 5-15% of the magnesium conentration.