发明名称 |
METHOD AND APPARATUS FOR LEAKAGE SUPPRESSION IN FLASH MEMORY IN RESPONSE TO EXTERNAL COMMANDS |
摘要 |
Techniques are described herein for detecting and recovering over-erased memory cells in a flash memory device. In one embodiment, a flash memory device includes a memory array including a plurality of blocks of memory cells. The device also includes a command interface to receive a command from a source external to the memory device. The device also includes a controller including logic to perform a leakage-suppression process in response to the command. The leakage-suppression process includes performing a soft program operation to increase a threshold voltage of one or more over-erased memory cells in a given block of memory cells and establish an erased state. |
申请公布号 |
US2012262987(A1) |
申请公布日期 |
2012.10.18 |
申请号 |
US201113308266 |
申请日期 |
2011.11.30 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
KUO NAI-PING;LO SU-CHUEH;CHANG KUEN-LONG;HUNG CHUN-HSIUNG;CHENG CHIA-FENG;CHEN KEN-HUI;WANG YU-CHEN |
分类号 |
G11C16/10 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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