发明名称 PROCESS FOR PRODUCING SILICON FILM
摘要 A process for producing a silicon film, comprising applying a composition containing a silane compound represented by a compositional formula SinRm (wherein R's independently represent a hydrogen atom, a linear saturated hydrocarbon group having 1 to 20 carbon atoms inclusive, a branched saturated hydrocarbon group having 3 to 20 carbon atoms inclusive, a cyclic saturated hydrocarbon group having 3 to 10 carbon atoms inclusive, an aryl group having 6 to 20 carbon atoms, an aralkyl group having 7 to 20 carbon atoms, a hydroxyl group or a halogen atom; n represents an integer of 3 to 10000 inclusive; and m represents an integer of n to (2n+2)) on a substrate to form a film-like material and irradiating the film-like material with pulsed light to convert the film-like material into a silicon film.
申请公布号 WO2012141292(A1) 申请公布日期 2012.10.18
申请号 WO2012JP60140 申请日期 2012.04.13
申请人 SHOWA DENKO K.K.;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY;SHINOZAKI KENJI;UCHIDA HIROSHI 发明人 SHINOZAKI KENJI;UCHIDA HIROSHI;IGARASHI MASAYASU;SHIMADA SHIGERU;TACHIBANA HIROAKI;SATO KAZUHIKO
分类号 C01B33/02 主分类号 C01B33/02
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