发明名称 |
Stacked composite device including a group III-V transistor and a group IV diode |
摘要 |
In one implementation, a stacked composite device comprises a group IV diode and a group III-V transistor stacked over the group IV diode. A cathode of the group IV diode is in contact with a source of the group III-V transistor, an anode of the group IV diode is coupled to a gate of the group III-V transistor to provide a composite anode on a bottom side of the stacked composite device, and a drain of the group III-V transistor provides a composite cathode on a top side of the stacked composite device. |
申请公布号 |
EP2511954(A1) |
申请公布日期 |
2012.10.17 |
申请号 |
EP20120163107 |
申请日期 |
2012.04.04 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
MCDONALD, TIM;BRIERE, MICHAEL A. |
分类号 |
H01L25/18;H03K17/567 |
主分类号 |
H01L25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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