| 摘要 |
<p>We describe the structure and method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer (2), a SyAP pinned layer (345), a naturally oxidized, crystalline MgO tunneling barrier layer (6) that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer (7) that comprises an amorphous layer (72) of Co60Fe20B20 of approximately 20 angstroms thickness formed between two crystalline layers (71,73) of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
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